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AON6268 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AON6268

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 56 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.3 V

Максимально допустимый постоянный ток стока (Id): 44 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 22 ns

Выходная емкость (Cd): 670 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0047 Ohm

Тип корпуса: DFN5x6

Аналог (замена) для AON6268

 

 

AON6268 Datasheet (PDF)

1.1. aon6268.pdf Size:331K _aosemi

AON6268
AON6268

AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS=4.5V) < 6.3mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger D DFN5x6 Top View Top View Bottom View

4.1. aon6264e.pdf Size:347K _aosemi

AON6268
AON6268

AON6264E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.5mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 13.3mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply

4.2. aon6260.pdf Size:262K _aosemi

AON6268
AON6268

AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.4mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 3.5mΩ extremely low combinati

 4.3. aon6266.pdf Size:368K _aosemi

AON6268
AON6268

AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology 60V • Low RDS(ON) ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 15mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 19mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Con

4.4. aon6262e.pdf Size:334K _aosemi

AON6268
AON6268

AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 6.2mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply •

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Список транзисторов

Обновления

MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |
 

 

 

 

 

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