AON6276 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6276  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 215 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: DFN5X6EP1

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AON6276 datasheet

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AON6276

AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:318K  1
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AON6276

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:318K  aosemi
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AON6276

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:285K  aosemi
 aon6270.pdf pdf_icon

AON6276

AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6220, AON6224A, AON6226, AON6232A, AON6262E, AON6264E, AON6266E, AON6268, AO4407, AON6284A, AON6312, AON6314, AON6354, AON6358, AON6360, AON6362, AON6366E