AON6276 Todos los transistores

 

AON6276 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6276
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 215 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: DFN5X6EP1
 

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AON6276 Datasheet (PDF)

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AON6276

AON6276TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:318K  1
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AON6276

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:318K  aosemi
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AON6276

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:285K  aosemi
 aon6270.pdf pdf_icon

AON6276

AON627075V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AON6270 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6220 , AON6224A , AON6226 , AON6232A , AON6262E , AON6264E , AON6266E , AON6268 , 2SK3918 , AON6284A , AON6312 , AON6314 , AON6354 , AON6358 , AON6360 , AON6362 , AON6366E .

 

 
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