AON6276 Datasheet. Specs and Replacement

Type Designator: AON6276

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: DFN5X6EP1

AON6276 substitution

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AON6276 datasheet

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AON6276

AON6276 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6276

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6276

AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6276

AON6270 75V N-Channel MOSFET General Description Product Summary VDS 75V The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AON6220, AON6224A, AON6226, AON6232A, AON6262E, AON6264E, AON6266E, AON6268, EMB04N03H, AON6284A, AON6312, AON6314, AON6354, AON6358, AON6360, AON6362, AON6366E

Keywords - AON6276 MOSFET specs

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