All MOSFET. AON6276 Datasheet

 

AON6276 Datasheet and Replacement


   Type Designator: AON6276
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: DFN5X6EP1
 

 AON6276 substitution

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AON6276 Datasheet (PDF)

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AON6276

AON6276TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:318K  1
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AON6276

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:318K  aosemi
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AON6276

AON627880V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6278 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:285K  aosemi
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AON6276

AON627075V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AON6270 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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Datasheet: AON6220 , AON6224A , AON6226 , AON6232A , AON6262E , AON6264E , AON6266E , AON6268 , AO3407 , AON6284A , AON6312 , AON6314 , AON6354 , AON6358 , AON6360 , AON6362 , AON6366E .

History: 2P829J9 | AOLF66417 | SDF5N100JAA

Keywords - AON6276 MOSFET datasheet

 AON6276 cross reference
 AON6276 equivalent finder
 AON6276 lookup
 AON6276 substitution
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