AON6314 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6314
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 32.5 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 85 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 400 pF
Resistencia drenaje-fuente RDS(on): 0.0028 Ohm
Empaquetado / Estuche: DFN5x6EP1
Búsqueda de reemplazo de MOSFET AON6314
AON6314 Datasheet (PDF)
1.1. aon6314.pdf 
Size:359K _aosemi
AON6314 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing •
4.1. aon6312.pdf Size:261K _aosemi
AON6312 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 130A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.85mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing
5.1. aon6324.pdf Size:352K _update
AON6324 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing •
5.2. aon6382.pdf Size:339K _aosemi
AON6382 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.85mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing
5.3. aon6372.pdf Size:259K _aosemi
AON6372 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 47A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 11.3mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolat
5.4. aon6380.pdf Size:368K _aosemi
AON6380 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 24A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters i
5.5. aon6354.pdf Size:346K _aosemi
AON6354 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 83A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Ser
5.6. aon6370.pdf Size:261K _aosemi
AON6370 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 47A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 11.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing • Isola
5.7. aon6360.pdf Size:268K _aosemi
AON6360 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (enhanced αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in C
5.8. aon6358.pdf Size:344K _aosemi
AON6358 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.6mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolate
5.9. aon6366e.pdf Size:362K _aosemi
AON6366E 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 34A • Optimized for load switch RDS(ON) (at VGS=10V) < 3.7mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • ESD protected • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 App
5.10. aon6384.pdf Size:344K _aosemi
AON6384 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 83A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Serv
5.11. aon6368.pdf Size:265K _aosemi
AON6368 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 52A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.1mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 9.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing • Isolat
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
