IRFD9014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD9014
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.1 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 63 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: HD-1
Búsqueda de reemplazo de MOSFET IRFD9014
IRFD9014 Datasheet (PDF)
irfd9014pbf.pdf
PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
Otros transistores... IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFZ44N , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918