IRFD9014 Datasheet and Replacement
Type Designator: IRFD9014
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 12(max) nC
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: HD-1
IRFD9014 substitution
IRFD9014 Datasheet (PDF)
irfd9014pbf.pdf

PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R
irfd9014pbf sihfd9014.pdf

IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9014 sihfd9014.pdf

IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
Datasheet: IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFZ44N , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 .
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