IRFD9014
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFD9014
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.1
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12(max)
nC
trⓘ - Rise Time: 63
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package: HD-1
IRFD9014
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD9014
Datasheet (PDF)
..1. Size:1819K international rectifier
irfd9014pbf.pdf 
PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R
..3. Size:1751K vishay
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
..4. Size:1750K vishay
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
7.2. Size:131K vishay
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
7.3. Size:129K vishay
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
Datasheet: IRFD120
, IRFD210
, IRFD214
, IRFD220
, IRFD224
, IRFD310
, IRFD320
, IRFD420
, IRFZ44N
, IRFD9024
, IRFD9110
, IRFD9120
, IRFD9210
, IRFD9220
, IRFDC20
, IRFE024
, IRFE110
.
