AON6372 Todos los transistores

 

AON6372 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6372

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 26 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 47 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 325 pF

Resistencia drenaje-fuente RDS(on): 0.0072 Ohm

Empaquetado / Estuche: DFN5x6

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AON6372 Datasheet (PDF)

1.1. aon6372.pdf Size:259K _aosemi

AON6372
AON6372

AON6372 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 47A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 11.3mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolat

4.1. aon6370.pdf Size:261K _aosemi

AON6372
AON6372

AON6370 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 47A • Low Gate Charge RDS(ON) (at VGS=10V) < 7.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 11.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing • Isola

 5.1. aon6324.pdf Size:352K _update

AON6372
AON6372

AON6324 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing •

5.2. aon6384.pdf Size:344K _aosemi

AON6372
AON6372

AON6384 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 83A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Serv

 5.3. aon6380.pdf Size:368K _aosemi

AON6372
AON6372

AON6380 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 24A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters i

5.4. aon6354.pdf Size:346K _aosemi

AON6372
AON6372

AON6354 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 83A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Ser

 5.5. aon6312.pdf Size:261K _aosemi

AON6372
AON6372

AON6312 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 130A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.85mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing

5.6. aon6360.pdf Size:268K _aosemi

AON6372
AON6372

AON6360 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (enhanced αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in C

5.7. aon6314.pdf Size:359K _aosemi

AON6372
AON6372

AON6314 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing •

5.8. aon6366e.pdf Size:362K _aosemi

AON6372
AON6372

AON6366E 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 30V • Low RDS(ON) ID (at VGS=10V) 34A • Optimized for load switch RDS(ON) (at VGS=10V) < 3.7mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 5.2mΩ • ESD protected • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 App

5.9. aon6382.pdf Size:339K _aosemi

AON6372
AON6372

AON6382 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.85mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 2.5mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing

5.10. aon6358.pdf Size:344K _aosemi

AON6372
AON6372

AON6358 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.2mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.6mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolate

5.11. aon6368.pdf Size:265K _aosemi

AON6372
AON6372

AON6368 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology 30V • Low RDS(ON) ID (at VGS=10V) 52A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.1mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 9.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested • DC/DC Converters in Computing • Isolat

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