AON6734 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6734

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: DFN5X6EP1

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AON6734 datasheet

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AON6734

AON6734 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:268K  1
 aon6786.pdf pdf_icon

AON6734

AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.2. Size:262K  1
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AON6734

AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 9.3. Size:331K  aosemi
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AON6734

AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6384, AON6406, AON6528, AON6548, AON6560, AON6590, AON6661, AON6667, IRFB4110, AON6764, AON6792, AON6794, AON6796, AON6982, AON6984, AON6992, AON6994