AON6734 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON6734
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5X6EP1
AON6734 Datasheet (PDF)
aon6734.pdf
AON673430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6786.pdf
AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6790.pdf
AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6792.pdf
AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6774.pdf
AON677430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
aon6794.pdf
AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6708.pdf
AON670830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6708 uses advanced trenchID = 30A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)
aon6702.pdf
AON670230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6718l.pdf
AON6718LN-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM AON6718L uses advanced trench technology VDS (V) = 30Vwith a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V)ideally suited for use as a low side switch in CPU core RDS(ON)
aon6716.pdf
AON671630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6760.pdf
AON676030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
aon6788.pdf
AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6712.pdf
AON671230V N-Channel MOSFETSRFET TM General Description Product SummaryThe AON6712 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 20A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)
aon6756.pdf
AON675630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6754.pdf
AON675430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6758.pdf
AON675830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6780.pdf
AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6752.pdf
AON675230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
aon6796.pdf
AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
aon6764.pdf
AON676430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6704a.pdf
AON6704A30V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6710.pdf
AON671030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6710 uses advanced trenchID = 20A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)
aon6782.pdf
AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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