AON6796 Todos los transistores

 

AON6796 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6796
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: DFN5X6
 
   - Selección ⓘ de transistores por parámetros

 

AON6796 Datasheet (PDF)

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AON6796

AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:262K  1
 aon6790.pdf pdf_icon

AON6796

AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.2. Size:331K  aosemi
 aon6792.pdf pdf_icon

AON6796

AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:243K  aosemi
 aon6794.pdf pdf_icon

AON6796

AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON6560 , AON6590 , AON6661 , AON6667 , AON6734 , AON6764 , AON6792 , AON6794 , AON6414A , AON6982 , AON6984 , AON6992 , AON6994 , AON6996 , AON6998 , AON7140 , AON7230 .

History: LBSS139DW1T1G | SVFP7N70MJ

 

 
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History: LBSS139DW1T1G | SVFP7N70MJ

AON6796   AON6796   AON6796  

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