AON6992 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6992
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
Paquete / Cubierta: DFN5X6D
Búsqueda de reemplazo de AON6992 MOSFET
AON6992 Datasheet (PDF)
aon6992.pdf
AON699230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6998.pdf
AON699830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)
aon6996.pdf
AON699630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V)
aon6994.pdf
AON699430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON6667 , AON6734 , AON6764 , AON6792 , AON6794 , AON6796 , AON6982 , AON6984 , AON6414A , AON6994 , AON6996 , AON6998 , AON7140 , AON7230 , AON7232 , AON7246E , AON7262E .
History: AON6160 | NP60N03KUG | STD95NH02LT4 | STD9HN65M2 | VBZL30N06 | SQS400EN | AON7232
History: AON6160 | NP60N03KUG | STD95NH02LT4 | STD9HN65M2 | VBZL30N06 | SQS400EN | AON7232
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