All MOSFET. AON6992 Datasheet

 

AON6992 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6992
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6D

 AON6992 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6992 Datasheet (PDF)

 ..1. Size:353K  aosemi
 aon6992.pdf

AON6992 AON6992

AON699230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:350K  aosemi
 aon6998.pdf

AON6992 AON6992

AON699830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:490K  aosemi
 aon6996.pdf

AON6992 AON6992

AON699630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:349K  aosemi
 aon6994.pdf

AON6992 AON6992

AON699430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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