IRFD9120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFD9120
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 18(max) nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: HD-1

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IRFD9120 Datasheet (PDF)

..1. Size:85K motorola
irfd9120.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRFD9120/DIRFD9120TMOS Field Effect TransistorIRFD9123Dual In Line PackageP-Channel Enhancement Mode Ideal for Peripheral Control Applications TMOS FETTRANSISTORS Intermediate 1 Watt Power CapabilityFET DIP Standard DIP Outline1 DRAIN1322GATECASE 370-01, STYLE 13 SOURCEMAXIMUM RAT

..2. Size:1795K international rectifier
irfd9120pbf.pdf

PD- 95919IRFD9120PbF Lead-Free10/28/04Document Number: 91139 www.vishay.com1IRFD9120PbFDocument Number: 91139 www.vishay.com2IRFD9120PbFDocument Number: 91139 www.vishay.com3IRFD9120PbFDocument Number: 91139 www.vishay.com4IRFD9120PbFDocument Number: 91139 www.vishay.com5IRFD9120PbFDocument Number: 91139 www.vishay.com6IRFD9120PbFPeak Diode R

..3. Size:173K international rectifier
irfd9120.pdf

..4. Size:2027K vishay
irfd9120 sihfd9120.pdf

IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin

..5. Size:2028K vishay
irfd9120pbf sihfd9120.pdf

..6. Size:1875K infineon
irfd9120 sihfd9120.pdf

IRFD9120, SiHFD9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating TemperatureS Fast Switc

8.1. Size:218K international rectifier
irfd9113.pdf

8.2. Size:173K international rectifier
irfd9110.pdf

8.3. Size:1810K international rectifier
irfd9110pbf.pdf

PD- 95921IRFD9110PbF Lead-Free10/28/04Document Number: 91138 www.vishay.com1IRFD9110PbFDocument Number: 91138 www.vishay.com2IRFD9110PbFDocument Number: 91138 www.vishay.com3IRFD9110PbFDocument Number: 91138 www.vishay.com4IRFD9110PbFDocument Number: 91138 www.vishay.com5IRFD9110PbFDocument Number: 91138 www.vishay.com6IRFD9110PbFPeak Diode R

8.4. Size:1639K vishay
irfd9110 sihfd9110.pdf

IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin

8.5. Size:1640K vishay
irfd9110pbf sihfd9110.pdf

Otros transistores... IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , 20N60 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 .

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