IRFD9120 Todos los transistores

 ..1. Size:85K  motorola
 irfd9120.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRFD9120/D IRFD9120 TMOS Field Effect Transistor IRFD9123 Dual In Line Package P-Channel Enhancement Mode Ideal for Peripheral Control Applications TMOS FET TRANSISTORS Intermediate 1 Watt Power Capability FET DIP Standard DIP Outline 1 DRAIN 1 3 2 2 GATE CASE 370-01, STYLE 1 3 SOURCE MAXIMUM RAT

 ..2. Size:1795K  international rectifier
 irfd9120pbf.pdf

PD- 95919 IRFD9120PbF Lead-Free 10/28/04 Document Number 91139 www.vishay.com 1 IRFD9120PbF Document Number 91139 www.vishay.com 2 IRFD9120PbF Document Number 91139 www.vishay.com 3 IRFD9120PbF Document Number 91139 www.vishay.com 4 IRFD9120PbF Document Number 91139 www.vishay.com 5 IRFD9120PbF Document Number 91139 www.vishay.com 6 IRFD9120PbF Peak Diode R

 ..3. Size:173K  international rectifier
 irfd9120.pdf

 ..4. Size:2027K  vishay
 irfd9120 sihfd9120.pdf

IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin

 ..5. Size:2028K  vishay
 irfd9120pbf sihfd9120.pdf

IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin

 ..6. Size:1875K  infineon
 irfd9120 sihfd9120.pdf

IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature S Fast Switc

 8.1. Size:218K  international rectifier
 irfd9113.pdf

 8.2. Size:173K  international rectifier
 irfd9110.pdf

 8.3. Size:1810K  international rectifier
 irfd9110pbf.pdf

PD- 95921 IRFD9110PbF Lead-Free 10/28/04 Document Number 91138 www.vishay.com 1 IRFD9110PbF Document Number 91138 www.vishay.com 2 IRFD9110PbF Document Number 91138 www.vishay.com 3 IRFD9110PbF Document Number 91138 www.vishay.com 4 IRFD9110PbF Document Number 91138 www.vishay.com 5 IRFD9110PbF Document Number 91138 www.vishay.com 6 IRFD9110PbF Peak Diode R

 8.4. Size:1639K  vishay
 irfd9110 sihfd9110.pdf

IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin

 8.5. Size:1640K  vishay
 irfd9110pbf sihfd9110.pdf

IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin