IRFD9120 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFD9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 18(max) nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: HD-1
IRFD9120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD9120 Datasheet (PDF)
irfd9120.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRFD9120/DIRFD9120TMOS Field Effect TransistorIRFD9123Dual In Line PackageP-Channel Enhancement Mode Ideal for Peripheral Control Applications TMOS FETTRANSISTORS Intermediate 1 Watt Power CapabilityFET DIP Standard DIP Outline1 DRAIN1322GATECASE 370-01, STYLE 13 SOURCEMAXIMUM RAT
irfd9120pbf.pdf
PD- 95919IRFD9120PbF Lead-Free10/28/04Document Number: 91139 www.vishay.com1IRFD9120PbFDocument Number: 91139 www.vishay.com2IRFD9120PbFDocument Number: 91139 www.vishay.com3IRFD9120PbFDocument Number: 91139 www.vishay.com4IRFD9120PbFDocument Number: 91139 www.vishay.com5IRFD9120PbFDocument Number: 91139 www.vishay.com6IRFD9120PbFPeak Diode R
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
irfd9120pbf sihfd9120.pdf
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating TemperatureS Fast Switc
irfd9110pbf.pdf
PD- 95921IRFD9110PbF Lead-Free10/28/04Document Number: 91138 www.vishay.com1IRFD9110PbFDocument Number: 91138 www.vishay.com2IRFD9110PbFDocument Number: 91138 www.vishay.com3IRFD9110PbFDocument Number: 91138 www.vishay.com4IRFD9110PbFDocument Number: 91138 www.vishay.com5IRFD9110PbFDocument Number: 91138 www.vishay.com6IRFD9110PbFPeak Diode R
irfd9110 sihfd9110.pdf
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9110pbf sihfd9110.pdf
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
Datasheet: IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , 20N60 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 .
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