All MOSFET. IRFD9120 Datasheet

 

IRFD9120 Datasheet and Replacement


   Type Designator: IRFD9120
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: HD-1
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IRFD9120 Datasheet (PDF)

 ..1. Size:85K  motorola
 irfd9120.pdf pdf_icon

IRFD9120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRFD9120/DIRFD9120TMOS Field Effect TransistorIRFD9123Dual In Line PackageP-Channel Enhancement Mode Ideal for Peripheral Control Applications TMOS FETTRANSISTORS Intermediate 1 Watt Power CapabilityFET DIP Standard DIP Outline1 DRAIN1322GATECASE 370-01, STYLE 13 SOURCEMAXIMUM RAT

 ..2. Size:1795K  international rectifier
 irfd9120pbf.pdf pdf_icon

IRFD9120

PD- 95919IRFD9120PbF Lead-Free10/28/04Document Number: 91139 www.vishay.com1IRFD9120PbFDocument Number: 91139 www.vishay.com2IRFD9120PbFDocument Number: 91139 www.vishay.com3IRFD9120PbFDocument Number: 91139 www.vishay.com4IRFD9120PbFDocument Number: 91139 www.vishay.com5IRFD9120PbFDocument Number: 91139 www.vishay.com6IRFD9120PbFPeak Diode R

 ..3. Size:173K  international rectifier
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IRFD9120

 ..4. Size:2027K  vishay
 irfd9120 sihfd9120.pdf pdf_icon

IRFD9120

IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin

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History: LF2805A | BRCS200P03DP | IRFB3004GPBF | H3055LJ | YJS3404A | LKK47-06C5 | TSM4424CS

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