AOT2140L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT2140L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 272 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 195 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 1635 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AOT2140L MOSFET
AOT2140L Datasheet (PDF)
aot2140l.pdf
AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aot2140l.pdf
isc N-Channel MOSFET Transistor AOT2140LFEATURESDrain Current I = 195A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aot2144l aob2144l.pdf
AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
aot2146l.pdf
AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 , 5N60 , AOT2142L , AOT2146L , AOT2502L , AOT2904 , AOT2906 , AOTF190A60L , AOTF20C60P , AOTF2142L .
History: HM3N120A | TPW60R040MFD | FDD107AN06LA0 | TPW60R080M | UTT25P10G-TA3-T | TPCC8062-H | CEE02N6A
History: HM3N120A | TPW60R040MFD | FDD107AN06LA0 | TPW60R080M | UTT25P10G-TA3-T | TPCC8062-H | CEE02N6A
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