AOT2906 Todos los transistores

 

AOT2906 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT2906
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 187 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 122 A

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Tiempo de subida (tr): 43 nS
   Conductancia de drenaje-sustrato (Cd): 1465 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0062 Ohm
   Paquete / Cubierta: TO220

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AOT2906 Datasheet (PDF)

 ..1. Size:373K  aosemi
aot2906.pdf

AOT2906 AOT2906

AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

 ..2. Size:245K  inchange semiconductor
aot2906.pdf

AOT2906 AOT2906

isc N-Channel MOSFET Transistor AOT2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.1. Size:341K  aosemi
aot290l aob290l.pdf

AOT2906 AOT2906

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 8.2. Size:341K  aosemi
aot290l.pdf

AOT2906 AOT2906

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 8.3. Size:362K  aosemi
aot2904.pdf

AOT2906 AOT2906

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:245K  inchange semiconductor
aot290l.pdf

AOT2906 AOT2906

isc N-Channel MOSFET Transistor AOT290LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.5. Size:206K  inchange semiconductor
aot2904.pdf

AOT2906 AOT2906

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT2904FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

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