All MOSFET. AOT2906 Datasheet

 

AOT2906 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT2906

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 187 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 122 A

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 1465 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm

Package: TO220

AOT2906 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT2906 Datasheet (PDF)

1.1. aot2906.pdf Size:373K _aosemi

AOT2906
AOT2906

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A • Low RDS(ON) • Low Gate Charger RDS(ON) (at VGS=10V) < 6.2mΩ < 5.9mΩ∗ • Optimized fast-switching applications RDS(ON) (at VGS=8V) < 7.2mΩ < 6.9mΩ∗ Applications 100% UIS Tested 100% Rg Tested • Synchronous

4.1. aot2904.pdf Size:362K _aosemi

AOT2906
AOT2906

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.4mΩ < 4.2mΩ∗ • Optimized fast-switching applications RDS(ON) (at VGS=6V) < 5.5mΩ < 5.2mΩ∗ Applications • Industrial 100% UIS Tested • BMS battery

4.2. aot290l.pdf Size:341K _aosemi

AOT2906
AOT2906

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) losses are minimized due to an extremely low combination of RDS(ON) and Crss.In add

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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