AOT2906 Datasheet. Specs and Replacement

Type Designator: AOT2906  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 122 A

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 1465 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TO220

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AOT2906 datasheet

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AOT2906

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V) ... See More ⇒

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AOT2906

isc N-Channel MOSFET Transistor AOT2906 FEATURES Drain Current I = 122A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒

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AOT2906

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:341K  aosemi
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AOT2906

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOSP32314, AOSP32368, AOSP66406, AOT2140L, AOT2142L, AOT2146L, AOT2502L, AOT2904, IRF1405, AOTF190A60L, AOTF20C60P, AOTF2142L, AOTF2146L, AOTF2210L, AOTF286L, AOTF290L, AOTF292L

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