AP92T12GP Todos los transistores

 

AP92T12GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP92T12GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 96 nS

Cossⓘ - Capacitancia de salida: 800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de AP92T12GP MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP92T12GP datasheet

 ..1. Size:130K  ape
ap92t12gp.pdf pdf_icon

AP92T12GP

AP92T12GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130A G S Description AP92T12 series are from Advanced Power innovated design and silicon process technology to ach

 0.1. Size:95K  ape
ap92t12gp-hf.pdf pdf_icon

AP92T12GP

AP92T12GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-res

 6.1. Size:93K  ape
ap92t12gi-hf.pdf pdf_icon

AP92T12GP

AP92T12GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I) ruggedized device de

 9.1. Size:93K  ape
ap92t03gi-hf.pdf pdf_icon

AP92T12GP

AP92T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

Otros transistores... AOTF296L , AOW2502 , AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , IRLB3034 , AP95T10GP , AP97T07GP , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP .

 

 

 

 

↑ Back to Top
.