AP92T12GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP92T12GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 120 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 97 nC
Tiempo de subida (tr): 96 nS
Conductancia de drenaje-sustrato (Cd): 800 pF
Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET AP92T12GP
AP92T12GP Datasheet (PDF)
ap92t12gp.pdf
AP92T12GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAP92T12 series are from Advanced Power innovated designand silicon process technology to ach
ap92t12gp-hf.pdf
AP92T12GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-res
ap92t12gi-hf.pdf
AP92T12GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de
ap92t03gi-hf.pdf
AP92T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge
ap92t03gsp-hf.pdf
AP92T03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching,ruggediz
ap92t03gp.pdf
AP92T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching,ruggedized device design, lowDTO-263(
ap92t03gs ap92t03gp.pdf
AP92T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching,ruggedized device design, lowDTO-263(
ap92t03gh ap92t03gj ap92t03gh j-hf.pdf
AP92T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower On-resistance RDS(ON) 4m Fast Switching Characteristics ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDS TO-252(H)best combination of fa
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