Справочник MOSFET. AP92T12GP

 

AP92T12GP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP92T12GP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   trⓘ - Время нарастания: 96 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

AP92T12GP Datasheet (PDF)

 ..1. Size:130K  ape
 ap92t12gp.pdf pdf_icon

AP92T12GP

AP92T12GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAP92T12 series are from Advanced Power innovated designand silicon process technology to ach

 0.1. Size:95K  ape
 ap92t12gp-hf.pdf pdf_icon

AP92T12GP

AP92T12GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-res

 6.1. Size:93K  ape
 ap92t12gi-hf.pdf pdf_icon

AP92T12GP

AP92T12GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de

 9.1. Size:93K  ape
 ap92t03gi-hf.pdf pdf_icon

AP92T12GP

AP92T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge

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History: FDB070AN06A0-F085 | JCS5N50CT | STD20NF06 | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005

 

 
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