AP95T10GP Todos los transistores

 

AP95T10GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP95T10GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 910 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: TO220
 

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AP95T10GP Datasheet (PDF)

 ..1. Size:144K  ape
 ap95t10gp.pdf pdf_icon

AP95T10GP

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas

 0.1. Size:95K  ape
 ap95t10gp-hf.pdf pdf_icon

AP95T10GP

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist

 6.1. Size:175K  ape
 ap95t10gi.pdf pdf_icon

AP95T10GP

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP95T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and

 6.2. Size:59K  ape
 ap95t10gw-hf.pdf pdf_icon

AP95T10GP

AP95T10GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist

MOSTRAR MÁS

Otros transistores... AOW2502 , AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , IRF9640 , AP97T07GP , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP .

History: SE4607 | 2SK3652 | JMPL1025AE | SSI7N60B | SWP630D | SKQ55P02AD | PDMN66D0LDW

 

 
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