AP95T10GP Todos los transistores

 

AP95T10GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP95T10GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 210 nS

Cossⓘ - Capacitancia de salida: 910 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: TO220

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AP95T10GP datasheet

 ..1. Size:144K  ape
 ap95t10gp.pdf pdf_icon

AP95T10GP

AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fas

 0.1. Size:95K  ape
 ap95t10gp-hf.pdf pdf_icon

AP95T10GP

AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resist

 6.1. Size:175K  ape
 ap95t10gi.pdf pdf_icon

AP95T10GP

AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 6.2. Size:59K  ape
 ap95t10gw-hf.pdf pdf_icon

AP95T10GP

AP95T10GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resist

MOSTRAR MÁS

Otros transistores... AOW2502 , AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , IRF9640 , AP97T07GP , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP .

History: KHB4D0N65F | OSG65R900DTF | TMP4N65Z

 

 

 

 

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