AP95T10GP datasheet, аналоги, основные параметры

Наименование производителя: AP95T10GP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A

Электрические характеристики

tr ⓘ - Время нарастания: 210 ns

Cossⓘ - Выходная емкость: 910 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm

Тип корпуса: TO220

Аналог (замена) для AP95T10GP

- подборⓘ MOSFET транзистора по параметрам

 

AP95T10GP даташит

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 ap95t10gp.pdf pdf_icon

AP95T10GP

AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fas

 0.1. Size:95K  ape
 ap95t10gp-hf.pdf pdf_icon

AP95T10GP

AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resist

 6.1. Size:175K  ape
 ap95t10gi.pdf pdf_icon

AP95T10GP

AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 6.2. Size:59K  ape
 ap95t10gw-hf.pdf pdf_icon

AP95T10GP

AP95T10GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resist

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