AP95T10GP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP95T10GP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
tr ⓘ - Время нарастания: 210 ns
Cossⓘ - Выходная емкость: 910 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
Тип корпуса: TO220
Аналог (замена) для AP95T10GP
AP95T10GP Datasheet (PDF)
ap95t10gp.pdf

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas
ap95t10gp-hf.pdf

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist
ap95t10gi.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP95T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and
ap95t10gw-hf.pdf

AP95T10GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist
Другие MOSFET... AOW2502 , AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AON7403 , AP97T07GP , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP .
History: 2N7103 | IRFF230 | FDMA1023PZ | STK9N10
History: 2N7103 | IRFF230 | FDMA1023PZ | STK9N10



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