AP97T07GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP97T07GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 240 nS
Cossⓘ - Capacitancia de salida: 1160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de AP97T07GP MOSFET
- Selecciónⓘ de transistores por parámetros
AP97T07GP datasheet
ap97t07gp.pdf
AP97T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220A G S Description AP97T07 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast
ap97t07gp-hf.pdf
AP97T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resis
ap97t07gw-hf.pdf
AP97T07GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan
ap97t07gr-hf-pre.pdf
AP97T07GR-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and
Otros transistores... AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , IRFB7545 , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP .
History: EMB17C03G | 2SK1345 | RUE002N02 | STW45NM60 | HY3410PM | RF4E110BN | HY3410B
History: EMB17C03G | 2SK1345 | RUE002N02 | STW45NM60 | HY3410PM | RF4E110BN | HY3410B
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