AP97T07GP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP97T07GP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 220 A
tr ⓘ - Время нарастания: 240 ns
Cossⓘ - Выходная емкость: 1160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: TO220
Аналог (замена) для AP97T07GP
AP97T07GP Datasheet (PDF)
ap97t07gp.pdf

AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAP97T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fast
ap97t07gp-hf.pdf

AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resis
ap97t07gw-hf.pdf

AP97T07GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan
ap97t07gr-hf-pre.pdf

AP97T07GR-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and
Другие MOSFET... AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , 8N60 , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP .
History: 2SK1896 | NCE65NF068D | STD70N10F4
History: 2SK1896 | NCE65NF068D | STD70N10F4



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