AP9970GW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9970GW
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 240 nS
Cossⓘ - Capacitancia de salida: 1320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de AP9970GW MOSFET
AP9970GW Datasheet (PDF)
ap9970gw.pdf

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID3 240AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fast
ap9970gw-hf.pdf

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap9970gp-hf.pdf

AP9970GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
ap9970gi-hf.pdf

AP9970GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and fa
Otros transistores... AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , EMB04N03H , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP .
History: NCE60P04SN | FQD4P40TF | SWP630A1 | AP02N60I | IRFS9643 | AFN3406AS | STP23NM50N
History: NCE60P04SN | FQD4P40TF | SWP630A1 | AP02N60I | IRFS9643 | AFN3406AS | STP23NM50N



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