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AP9970GW MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9970GW

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 240 nS

Cossⓘ - Capacitancia de salida: 1320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: TO3P

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AP9970GW datasheet

 ..1. Size:211K  ape
 ap9970gw.pdf pdf_icon

AP9970GW

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID3 240A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast

 0.1. Size:93K  ape
 ap9970gw-hf.pdf pdf_icon

AP9970GW

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 7.1. Size:94K  ape
 ap9970gp-hf.pdf pdf_icon

AP9970GW

AP9970GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist

 7.2. Size:92K  ape
 ap9970gi-hf.pdf pdf_icon

AP9970GW

AP9970GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fa

MOSTRAR MÁS

Otros transistores... AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , AON7403 , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP .

History: NTD80N02-001 | IXFC22N60P | 12N60AF | RCJ220N25

 

 

 

 

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