AP9970GW MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9970GW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Rise Time (tr): 240 nS
Drain-Source Capacitance (Cd): 1320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: TO3P
AP9970GW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9970GW Datasheet (PDF)
1.1. ap9970gw-hf.pdf 
Size:93K _a-power
AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c
1.2. ap9970gw.pdf Size:211K _a-power
AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower On-resistance RDS(ON) 3.2mΩ ▼ RoHS Compliant & Halogen-Free ID3 240A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast
3.1. ap9970gp-hf.pdf Size:94K _a-power
AP9970GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance an
3.2. ap9970gk.pdf Size:136K _a-power
AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 50mΩ S ▼ Fast Switching Characteristic ID 5.8A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
3.3. ap9970gi-hf.pdf Size:92K _a-power
AP9970GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 100A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fast swit
3.4. ap9970gk-hf.pdf Size:58K _a-power
AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Lower Gate Charge RDS(ON) 50m? S Ў Fast Switching Characteristic ID 5.8A D Ў RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low
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