All MOSFET. AP9970GW Datasheet

 

AP9970GW MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9970GW

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Rise Time (tr): 240 nS

Drain-Source Capacitance (Cd): 1320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: TO3P

AP9970GW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9970GW Datasheet (PDF)

1.1. ap9970gw-hf.pdf Size:93K _a-power

AP9970GW
AP9970GW

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c

1.2. ap9970gw.pdf Size:211K _a-power

AP9970GW
AP9970GW

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower On-resistance RDS(ON) 3.2mΩ ▼ RoHS Compliant & Halogen-Free ID3 240A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast

 3.1. ap9970gk-hf.pdf Size:58K _a-power

AP9970GW
AP9970GW

AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Lower Gate Charge RDS(ON) 50m? S Ў Fast Switching Characteristic ID 5.8A D Ў RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

3.2. ap9970gi-hf.pdf Size:92K _a-power

AP9970GW
AP9970GW

AP9970GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 100A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fast swit

 3.3. ap9970gk.pdf Size:136K _a-power

AP9970GW
AP9970GW

AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 50mΩ S ▼ Fast Switching Characteristic ID 5.8A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

3.4. ap9970gp-hf.pdf Size:94K _a-power

AP9970GW
AP9970GW

AP9970GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance an

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