AP75N07AGP Todos los transistores

 

AP75N07AGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP75N07AGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO220

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AP75N07AGP datasheet

 ..1. Size:153K  ape
 ap75n07agp.pdf pdf_icon

AP75N07AGP

AP75N07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G Halogen Free & RoHS Compliant Product S Description AP75N07A series are from Advanced Power i

 0.1. Size:93K  ape
 ap75n07agp-hf.pdf pdf_icon

AP75N07AGP

AP75N07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rug

 7.1. Size:95K  ape
 ap75n07gi-hf.pdf pdf_icon

AP75N07AGP

AP75N07GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

 7.2. Size:126K  ape
 ap75n07gw.pdf pdf_icon

AP75N07AGP

AP75N07GW RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

MOSTRAR MÁS

Otros transistores... AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , AP9970GW , K2611 , AP75N07GP , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS .

History: RTR020N05 | 2SK1212 | RUE002N02 | SWD106R95VS | HY3410B | HY3410PM | RF4E110BN

 

 

 

 

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