AP75N07GP Todos los transistores

 

AP75N07GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP75N07GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO220
 

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AP75N07GP Datasheet (PDF)

 ..1. Size:152K  ape
 ap75n07gp.pdf pdf_icon

AP75N07GP

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

 6.1. Size:95K  ape
 ap75n07gi-hf.pdf pdf_icon

AP75N07GP

AP75N07GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 6.2. Size:126K  ape
 ap75n07gw.pdf pdf_icon

AP75N07GP

AP75N07GWRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.3. Size:192K  ape
 ap75n07gs p.pdf pdf_icon

AP75N07GP

AP75N07GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, TO-220(P)DSruggedized device design,

MOSTRAR MÁS

Otros transistores... AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , AP9970GW , AP75N07AGP , 2SK3918 , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS , AP9591GP .

History: 7NM70G-TF3-T | SI7613DN | HGW195N15S | PE636BA | AP6680GM | STD40NF3LL | AP6942GMT

 

 
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