AP75N07GP Todos los transistores

 

AP75N07GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP75N07GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO220

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AP75N07GP datasheet

 ..1. Size:152K  ape
 ap75n07gp.pdf pdf_icon

AP75N07GP

AP75N07GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G Halogen Free & RoHS Compliant S Description AP75N07 series are from Advanced Power innovated

 6.1. Size:95K  ape
 ap75n07gi-hf.pdf pdf_icon

AP75N07GP

AP75N07GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

 6.2. Size:126K  ape
 ap75n07gw.pdf pdf_icon

AP75N07GP

AP75N07GW RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.3. Size:192K  ape
 ap75n07gs p.pdf pdf_icon

AP75N07GP

AP75N07GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, TO-220(P) D S ruggedized device design,

MOSTRAR MÁS

Otros transistores... AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , AP9970GW , AP75N07AGP , EMB04N03H , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS , AP9591GP .

History: C3M0120090J

 

 

 

 

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