AP75N07GP. Аналоги и основные параметры
Наименование производителя: AP75N07GP
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Электрические характеристики
tr ⓘ - Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 690 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TO220
Аналог (замена) для AP75N07GP
- подборⓘ MOSFET транзистора по параметрам
AP75N07GP даташит
ap75n07gp.pdf
AP75N07GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G Halogen Free & RoHS Compliant S Description AP75N07 series are from Advanced Power innovated
ap75n07gi-hf.pdf
AP75N07GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching
ap75n07gw.pdf
AP75N07GW RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
ap75n07gs p.pdf
AP75N07GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, TO-220(P) D S ruggedized device design,
Другие MOSFET... AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP , AP97T07GP , AP9970GW , AP75N07AGP , EMB04N03H , AP75N07GS , AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS , AP9591GP .
History: HA210N06 | 2SK1562 | IAUC100N04S6N022 | ASDM20P09ZB | RUL035N02 | RUM002N02 | HA25N50
History: HA210N06 | 2SK1562 | IAUC100N04S6N022 | ASDM20P09ZB | RUL035N02 | RUM002N02 | HA25N50
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Список транзисторов
Обновления
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