AP98T06GS Todos los transistores

 

AP98T06GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP98T06GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 1120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO263
 

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AP98T06GS datasheet

 ..1. Size:165K  ape
 ap98t06gs.pdf pdf_icon

AP98T06GS

AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description AP98T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 0.1. Size:92K  ape
 ap98t06gs-hf.pdf pdf_icon

AP98T06GS

AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S

 6.1. Size:93K  ape
 ap98t06gp.pdf pdf_icon

AP98T06GS

AP98T06GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistanc

 6.2. Size:54K  ape
 ap98t06gp-hf.pdf pdf_icon

AP98T06GS

AP98T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

MOSTRAR MÁS

Otros transistores... AP85T10GP , AP95T07AGP , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS , AP9591GP , AP9591GS , IRF3205 , AP09N90CW , AP3990R , AP16N50P , AP80T10GP , AP80T10GR , AP09N70R-A , AP3989R , AP98T03GS .

 

 

 


 
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