AP16N50P Todos los transistores

 

AP16N50P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP16N50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 173.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de AP16N50P MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP16N50P datasheet

 ..1. Size:151K  ape
ap16n50p.pdf pdf_icon

AP16N50P

AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description AP16N50 series are from Advanced Power innovated

 0.1. Size:59K  ape
ap16n50p-hf.pdf pdf_icon

AP16N50P

AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 7.1. Size:58K  ape
ap16n50i-hf.pdf pdf_icon

AP16N50P

AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 7.2. Size:59K  ape
ap16n50w-hf.pdf pdf_icon

AP16N50P

AP16N50W-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

Otros transistores... AP9970AGP , AP9581GP , AP9581GS , AP9591GP , AP9591GS , AP98T06GS , AP09N90CW , AP3990R , 20N60 , AP80T10GP , AP80T10GR , AP09N70R-A , AP3989R , AP98T03GS , AP75T10BGP , AP75T10GP , AP75T12GP .

 

 

 

 

↑ Back to Top
.