Справочник MOSFET. AP16N50P

 

AP16N50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP16N50P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 173.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 630 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AP16N50P

 

 

AP16N50P Datasheet (PDF)

 ..1. Size:151K  ape
 ap16n50p.pdf

AP16N50P AP16N50P

AP16N50P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated

 0.1. Size:59K  ape
 ap16n50p-hf.pdf

AP16N50P AP16N50P

AP16N50P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 7.1. Size:58K  ape
 ap16n50i-hf.pdf

AP16N50P AP16N50P

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 7.2. Size:59K  ape
 ap16n50w-hf.pdf

AP16N50P AP16N50P

AP16N50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 7.3. Size:171K  ape
 ap16n50i.pdf

AP16N50P AP16N50P

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID3 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.4. Size:58K  ape
 ap16n50w.pdf

AP16N50P AP16N50P

AP16N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance a

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