AP95T06GP Todos los transistores

 

AP95T06GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP95T06GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de AP95T06GP MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP95T06GP datasheet

 ..1. Size:151K  ape
ap95t06gp.pdf pdf_icon

AP95T06GP

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno

 6.1. Size:63K  ape
ap95t06gs p-hf.pdf pdf_icon

AP95T06GP

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 6.2. Size:163K  ape
ap95t06gs.pdf pdf_icon

AP95T06GP

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno

 7.1. Size:114K  ape
ap95t06bgp.pdf pdf_icon

AP95T06GP

AP95T06BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 9m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resista

Otros transistores... AP80T10GR , AP09N70R-A , AP3989R , AP98T03GS , AP75T10BGP , AP75T10GP , AP75T12GP , AP85T08GS , IRF640N , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , AP85T03GS , AP2761S-A , AP2R803GJB , AP3987P .

History: AP8N3R5CMT | MTB028N10QNCQ8 | H10N60F | SVT068R5NT | IRLML5203PBF | 2SK3915-01MR | ME4454

 

 

 

 

↑ Back to Top
.