AP95T06GP MOSFET. Datasheet pdf. Equivalent
Type Designator: AP95T06GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 138 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 75 A
Rise Time (tr): 76 nS
Drain-Source Capacitance (Cd): 900 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220
AP95T06GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP95T06GP Datasheet (PDF)
1.1. ap95t06gp.pdf 
Size:151K _a-power
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 60V ▼ ▼ ▼ ▼ Lower On-resistance RDS(ON) 8.5mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 75A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP95T06 series are from Advanced Power inno
2.1. ap95t06gs.pdf Size:163K _a-power
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 60V ▼ ▼ ▼ ▼ Lower On-resistance RDS(ON) 8.5mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 75A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP95T06 series are from Advanced Power inno
2.2. ap95t06gs p-hf.pdf Size:63K _a-power
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 60V Ў Lower On-resistance RDS(ON) 8.5m? Ў Fast Switching Characteristic ID 75A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
