AP2761S-A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2761S-A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de AP2761S-A MOSFET
AP2761S-A Datasheet (PDF)
ap2761s-a.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap2761s-a-hf.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761S is specially designed as main switching devices for universal90~265VAC off-line AC/DC converter appl
ap2761p-a.pdf

AP2761P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-
ap2761i-a-hf.pdf

AP2761I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-r
Otros transistores... AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , AP85T03GS , IRFB4110 , AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP .
History: 2SK4146-S19-AY | AP50T10GJ | DMG8880LK3 | HGN022NE4SL | BUK7E2R6-60E | 2SK3652 | 2SK3835
History: 2SK4146-S19-AY | AP50T10GJ | DMG8880LK3 | HGN022NE4SL | BUK7E2R6-60E | 2SK3652 | 2SK3835



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