AP2761S-A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2761S-A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO263

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AP2761S-A datasheet

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AP2761S-A

AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 0.1. Size:94K  ape
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AP2761S-A

AP2761S-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description AP2761S is specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter appl

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AP2761S-A

AP2761P-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-

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AP2761S-A

AP2761I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10A G RoHS Compliant S Description AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- r

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