AP2761S-A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP2761S-A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Qg ⓘ - Общий заряд затвора: 53 nC
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO263
AP2761S-A Datasheet (PDF)
ap2761s-a.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap2761s-a-hf.pdf

AP2761S-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAP2761S is specially designed as main switching devices for universal90~265VAC off-line AC/DC converter appl
ap2761p-a.pdf

AP2761P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 650V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-
ap2761i-a-hf.pdf

AP2761I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 10AG RoHS CompliantSDescriptionAP2761 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-r
Другие MOSFET... AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , AP85T03GS , IRFB4110 , AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP .



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