AP9974GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9974GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 74 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 43 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 495 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: TO251

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AP9974GJ Datasheet (PDF)

..1. Size:198K ape
ap9974gj.pdf

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

0.1. Size:100K ape
ap9974gh-hf ap9974gj-hf.pdf

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast swi

7.1. Size:152K ape
ap9974gp.pdf

AP9974GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated de

7.2. Size:98K ape
ap9974gs p-hf.pdf

AP9974GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

7.3. Size:76K ape
ap9974gs ap9974gp.pdf

AP9974GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device desi

7.4. Size:234K ape
ap9974gh.pdf

7.5. Size:819K cn vbsemi
ap9974gs.pdf

AP9974GSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

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