Справочник MOSFET. AP9974GJ

 

AP9974GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9974GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 74 A
   Qgⓘ - Общий заряд затвора: 43 nC
   trⓘ - Время нарастания: 48 ns
   Cossⓘ - Выходная емкость: 495 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP9974GJ

 

 

AP9974GJ Datasheet (PDF)

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 ap9974gj.pdf

AP9974GJ AP9974GJ

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

 0.1. Size:100K  ape
 ap9974gh-hf ap9974gj-hf.pdf

AP9974GJ AP9974GJ

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast swi

 7.1. Size:152K  ape
 ap9974gp.pdf

AP9974GJ AP9974GJ

AP9974GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated de

 7.2. Size:98K  ape
 ap9974gs p-hf.pdf

AP9974GJ AP9974GJ

AP9974GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

 7.3. Size:76K  ape
 ap9974gs ap9974gp.pdf

AP9974GJ AP9974GJ

AP9974GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device desi

 7.4. Size:234K  ape
 ap9974gh.pdf

AP9974GJ AP9974GJ

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

 7.5. Size:819K  cn vbsemi
 ap9974gs.pdf

AP9974GJ AP9974GJ

AP9974GSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

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