AP25N10GH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP25N10GH datasheet

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ap25n10gh.pdf pdf_icon

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S

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ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design

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ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220

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nceap25n10ak.pdf pdf_icon

http //www.ncepower.com NCEAP25N10AK NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5