AP25N10GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP25N10GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AP25N10GH

AP25N10GH Datasheet (PDF)

..1. Size:238K ape
ap25n10gh.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

0.1. Size:100K ape
ap25n10gh-hf ap25n10gj-hf.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

6.1. Size:100K ape
ap25n10gp-hf ap25n10gs-hf.pdf

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

7.1. Size:746K ncepower
nceap25n10ak.pdf

http://www.ncepower.comNCEAP25N10AKNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5

7.2. Size:757K ncepower
nceap25n10ad.pdf

NCEAP25N10ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AD uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5

7.3. Size:723K ncepower
nceap25n10ag.pdf

http://www.ncepower.comNCEAP25N10AGNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP25N10AG uses Super Trench II technology that is V =100V,I =32ADS Duniquely optimized to provide the most efficient high frequencyR =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =26m (typical) @ V

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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