Справочник MOSFET. AP25N10GH

 

AP25N10GH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP25N10GH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP25N10GH

 

 

AP25N10GH Datasheet (PDF)

 ..1. Size:238K  ape
 ap25n10gh.pdf

AP25N10GH AP25N10GH

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 0.1. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf

AP25N10GH AP25N10GH

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

 6.1. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf

AP25N10GH AP25N10GH

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 7.1. Size:746K  ncepower
 nceap25n10ak.pdf

AP25N10GH AP25N10GH

http://www.ncepower.comNCEAP25N10AKNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5

 7.2. Size:757K  ncepower
 nceap25n10ad.pdf

AP25N10GH AP25N10GH

NCEAP25N10ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AD uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5

 7.3. Size:723K  ncepower
 nceap25n10ag.pdf

AP25N10GH AP25N10GH

http://www.ncepower.comNCEAP25N10AGNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP25N10AG uses Super Trench II technology that is V =100V,I =32ADS Duniquely optimized to provide the most efficient high frequencyR =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =26m (typical) @ V

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top