AP9972AGP Todos los transistores

 

AP9972AGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9972AGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220

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AP9972AGP datasheet

 ..1. Size:154K  ape
ap9972agp.pdf pdf_icon

AP9972AGP

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Simple Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description AP9972A series are from Advanced Power innovated desi

 0.1. Size:95K  ape
ap9972agp-hf.pdf pdf_icon

AP9972AGP

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

 6.1. Size:95K  ape
ap9972agr-hf.pdf pdf_icon

AP9972AGP

AP9972AGR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 6.2. Size:95K  ape
ap9972agi.pdf pdf_icon

AP9972AGP

AP9972AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resistance and

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