AP09N20J Todos los transistores

 

AP09N20J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09N20J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO251
 

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AP09N20J Datasheet (PDF)

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 ap09n20j.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 7.1. Size:238K  ape
 ap09n20h.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 7.2. Size:93K  ape
 ap09n20bgh-hf.pdf pdf_icon

AP09N20J

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f

 7.3. Size:216K  ape
 ap09n20h j-hf.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSTO-252(H)the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP9972GP , AP9972GS , AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , IRLB4132 , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H , AP03N70H .

History: 2SK2690-01 | NTMD4N03 | FCPF125N65S3 | CEU83A3 | CEU6086 | AP4501CGM-HF | UT2302G-AE2-R

 

 
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