Справочник MOSFET. AP09N20J

 

AP09N20J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP09N20J
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.6 A
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

AP09N20J Datasheet (PDF)

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 ap09n20j.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 7.1. Size:238K  ape
 ap09n20h.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 7.2. Size:93K  ape
 ap09n20bgh-hf.pdf pdf_icon

AP09N20J

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f

 7.3. Size:216K  ape
 ap09n20h j-hf.pdf pdf_icon

AP09N20J

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSTO-252(H)the best combination of fast switching,

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History: OSG55R190DF | AP2306CGN-HF | AOD504 | SWF6N65K | NP80N04DHE | BUZ78 | MTC6601N6

 

 
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