AP02N90P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP02N90P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP02N90P MOSFET
AP02N90P Datasheet (PDF)
ap02n90p.pdf

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve
ap02n90p-hf.pdf

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching
ap02n90h.pdf

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap02n90i.pdf

AP02N90IPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS compliantSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for s
Otros transistores... AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , IRFP250 , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H , AP03N70H , AP03N70J , AP3P9R0H .
History: FMV13N60E | DM12N65C-2 | TK09H90A | CEDM7001E | FHA20N50A | IXFT15N100Q3 | 2N5517
History: FMV13N60E | DM12N65C-2 | TK09H90A | CEDM7001E | FHA20N50A | IXFT15N100Q3 | 2N5517



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