All MOSFET. AP02N90P Datasheet

 

AP02N90P Datasheet and Replacement


   Type Designator: AP02N90P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
   Package: TO220
 

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AP02N90P Datasheet (PDF)

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AP02N90P

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve

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 ap02n90p-hf.pdf pdf_icon

AP02N90P

AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching

 7.1. Size:197K  ape
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AP02N90P

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the

 7.2. Size:39K  ape
 ap02n90i.pdf pdf_icon

AP02N90P

AP02N90IPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS compliantSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for s

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History: FTK2N65P

Keywords - AP02N90P MOSFET datasheet

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