AP95T10GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP95T10GI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 210 nS
Cossⓘ - Capacitancia de salida: 910 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de AP95T10GI MOSFET
AP95T10GI Datasheet (PDF)
ap95t10gi.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP95T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and
ap95t10gi-hf.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de
ap95t10gp.pdf

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas
ap95t10gw-hf.pdf

AP95T10GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist
Otros transistores... AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , IRFZ24N , AP04N60J , APS04N60H , AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P .
History: DMN3016LK3 | IXTA42N15T | DMN32D2LFB4
History: DMN3016LK3 | IXTA42N15T | DMN32D2LFB4



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