AP95T10GI Todos los transistores

 

AP95T10GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP95T10GI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 210 nS

Cossⓘ - Capacitancia de salida: 910 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: TO220F

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AP95T10GI datasheet

 ..1. Size:175K  ape
 ap95t10gi.pdf pdf_icon

AP95T10GI

AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 0.1. Size:93K  ape
 ap95t10gi-hf.pdf pdf_icon

AP95T10GI

AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I) ruggedized device de

 6.1. Size:144K  ape
 ap95t10gp.pdf pdf_icon

AP95T10GI

AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fas

 6.2. Size:59K  ape
 ap95t10gw-hf.pdf pdf_icon

AP95T10GI

AP95T10GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resist

MOSTRAR MÁS

Otros transistores... AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , TK10A60D , AP04N60J , APS04N60H , AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P .

History: IRFS254B | SiS412DN | WMM80R1K0S | IPP052NE7N3 | WMP80R1K0S | IXFK60N55Q2 | WMN80R1K5S

 

 

 

 

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