AP95T10GI Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP95T10GI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
tr ⓘ - Время нарастания: 210 ns
Cossⓘ - Выходная емкость: 910 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP95T10GI
AP95T10GI Datasheet (PDF)
ap95t10gi.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP95T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and
ap95t10gi-hf.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de
ap95t10gp.pdf

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas
ap95t10gw-hf.pdf

AP95T10GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist
Другие MOSFET... AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , IRFZ24N , AP04N60J , APS04N60H , AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P .
History: HY3708PM | SQJ570EP | PDM6UT20V08E | AMS4004 | CEP13N5A | SLP5N60C | 2SK2339
History: HY3708PM | SQJ570EP | PDM6UT20V08E | AMS4004 | CEP13N5A | SLP5N60C | 2SK2339



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