AP6679BGJ Todos los transistores

 

AP6679BGJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6679BGJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 63 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 67 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO251
 

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AP6679BGJ Datasheet (PDF)

 ..1. Size:166K  ape
 ap6679bgj.pdf pdf_icon

AP6679BGJ

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 0.1. Size:98K  ape
 ap6679bgh-hf ap6679bgj-hf.pdf pdf_icon

AP6679BGJ

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 0.2. Size:134K  ape
 ap6679bgjb.pdf pdf_icon

AP6679BGJ

AP6679BGJB-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 6.1. Size:95K  ape
 ap6679bgm-hf.pdf pdf_icon

AP6679BGJ

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

MOSTRAR MÁS

Otros transistores... APS04N60H , AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , IRFZ46N , AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI .

History: IRF6713S | SUD40N08-16 | IPP65R280E6 | AUIRFZ24NS | NTLUS4C16N | AOCA36102E | RJK1212DPA

 

 
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