AP6679BGJB Todos los transistores

 

AP6679BGJB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6679BGJB

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 67 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO251S

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AP6679BGJB datasheet

 ..1. Size:134K  ape
 ap6679bgjb.pdf pdf_icon

AP6679BGJB

AP6679BGJB-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 5.1. Size:98K  ape
 ap6679bgh-hf ap6679bgj-hf.pdf pdf_icon

AP6679BGJB

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 5.2. Size:166K  ape
 ap6679bgj.pdf pdf_icon

AP6679BGJB

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon G D process technology to achieve th

 6.1. Size:95K  ape
 ap6679bgm-hf.pdf pdf_icon

AP6679BGJB

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o

MOSTRAR MÁS

Otros transistores... AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AO3407 , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI , AP60T03GH .

History: STF12N120K5 | FDBL9406F085 | CJE3134K

 

 

 

 

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