AP6679BGJB PDF and Equivalents Search

 

AP6679BGJB Specs and Replacement

Type Designator: AP6679BGJB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 63 A

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251S

AP6679BGJB substitution

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AP6679BGJB datasheet

 ..1. Size:134K  ape
ap6679bgjb.pdf pdf_icon

AP6679BGJB

AP6679BGJB-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest... See More ⇒

 5.1. Size:98K  ape
ap6679bgh-hf ap6679bgj-hf.pdf pdf_icon

AP6679BGJB

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, ... See More ⇒

 5.2. Size:166K  ape
ap6679bgj.pdf pdf_icon

AP6679BGJB

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon G D process technology to achieve th... See More ⇒

 6.1. Size:95K  ape
ap6679bgm-hf.pdf pdf_icon

AP6679BGJB

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

Detailed specifications: AP03N70H, AP03N70J, AP3P9R0H, AP3P9R0J, AP3P9R0JB, AP3P9R0P, AP6679BGH, AP6679BGJ, AO3407, AP9561GJ, AP70T03GJ, AP70T03GJB, AP16N50I, AP0904GH, AP0904GJB, AP75T10GI, AP60T03GH

Keywords - AP6679BGJB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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