AP70T03GJ Todos los transistores

 

AP70T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO251

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AP70T03GJ datasheet

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AP70T03GJ

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description AP70T03 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology to achieve the lowest possible on-

 0.1. Size:98K  ape
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AP70T03GJ

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des

 0.2. Size:175K  ape
ap70t03gjb.pdf pdf_icon

AP70T03GJ

AP70T03GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

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AP70T03GJ

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Otros transistores... AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , AP9561GJ , 20N50 , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI , AP60T03GH , AP01N60J , AP9563GH .

History: AP03N70J | AP4407GM | AP9408AGM

 

 

 

 

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